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| ZXM62N03E6 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.11 ; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * * * * * * * * * Low on-resistance Fast switching speed Low threshold Low gate drive SOT23-6 package SOT23-6 APPLICATIONS DC - DC converters Power management functions Disconnect switches Motor control ORDERING INFORMATION DEVICE ZXM62N03E6TA ZXM62N03E6TC REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL Top View 3000 units 10000 units DEVICE MARKING * 2N03 ISSUE 1 - JUNE 2004 1 ZXM62N03E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V GS =10V; T A =25C)(b) (V GS =10V; T A =70C)(b) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) Power Dissipation at T A =25C (a) Linear Derating Factor Power Dissipation at T A =25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V DSS V GS ID I DM IS I SM PD PD T j :T stg LIMIT 30 20 3.2 2.6 18 2.1 18 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V A A A A W mW/C W mW/C C THERMAL RESISTANCE PARAMETER Junction to Ambient (a) Junction to Ambient (b) NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W ISSUE 1 - JUNE 2004 2 ZXM62N03E 6 ISSUE 1 - JUNE 2004 3 ZXM62N03E6 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge (3) V SD t rr Q rr 18.8 11.4 0.95 V ns nC T j =25C, I S =2.2A, V GS =0V T j =25C, I F =2.2A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 2.9 5.6 11.7 6.4 9.6 1.7 2.8 ns ns ns ns nC nC nC V DS =24V,V GS =10V, I D =2.2A (refer to test circuit) V DD =15V, I D =2.2A R G =6.0, R D =6.7 (refer to test circuit) C iss C oss C rss 380 90 30 pF pF pF V DS =25 V, V GS =0V, f=1MHz V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs 1.1 1.0 0.11 0.15 30 1 100 V A nA V S I D =250A, V GS =0V V DS =30V, V GS =0V V GS = 20V, V DS =0V I =250A, V DS = V GS D SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. V GS =10V, I D =2.2A V GS =4.5V, I D =1.1A V DS =10V,I D =1.1A (1) Measured under pulsed conditions. Width=300s. Duty cycle (R)2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ISSUE 1 - JUNE 2004 4 ZXM62N03E6 ISSUE 1 - JUNE 2004 5 ZXM62N03E6 ISSUE 1 - JUNE 2004 6 ZXM62N03E6 ISSUE 1 - JUNE 2004 7 ZXM62N03E6 PACKAGE DIMENSIONS PAD LAYOUT DETAILS b e L2 E E1 e1 D a DATUM A C A A2 A1 DIM Min A A1 A2 b C D E E1 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 Millimeters Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 Inches Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 (c) Zetex Semiconductors plc 2004 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex plc Lansdowne Road, Chadderton Oldham, OL9 9TY United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 1 - JUNE 2004 8 |
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